Home > slashdot > Ultra-Thin Alternative To Silicon

Ultra-Thin Alternative To Silicon

November 22nd, 2010 11:22 admin Leave a comment Go to comments

An anonymous reader writes “There’s good news in the search for the next generation of semiconductors. Researchers with the Lawrence Berkeley National Laboratory and UC Berkeley have successfully integrated ultra-thin layers of the semiconductor indium arsenide onto a silicon substrate to create a nanoscale transistor with excellent electronic properties (abstract). A member of the III–V family of semiconductors, indium arsenide offers several advantages as an alternative to silicon, including superior electron mobility and velocity, which makes it an outstanding candidate for future high-speed, low-power electronic devices.”

Source: Ultra-Thin Alternative To Silicon

Related Articles:

  1. Molybdenite As an Alternative To Silicon
  2. 4K Ultra HD Likely To Repeat the Failure of 3D Television
  3. Algae Could Be the Key To Ultra-Thin Batteries
  4. Sources Say ITU Has Approved Ultra-High Definition TV Standard
  5. Great Galloping Graphene! IBM’s New Transistor Works at Record Speed
blog comments powered by Disqus