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Samsung Develops Power-Sipping DDR4 Memory

January 4th, 2011 01:11 admin Leave a comment Go to comments

Alex writes with this excerpt from TechSpot: “Samsung Electronics has announced that it completed development of the industry’s first DDR4 DRAM module last month, using 30nm class process technology, and provided 1.2V 2GB DDR4 unbuffered dual in-line memory modules (UDIMM) to a controller maker for testing. The new DDR4 DRAM module can achieve data transfer rates of 2.133Gbps at 1.2V, compared to 1.35V and 1.5V DDR3 DRAM at an equivalent 30nm-class process technology, with speeds of up to 1.6Gbps. In a notebook, the DDR4 module reduces power consumption by 40 percent compared to a 1.5V DDR3 module. The module makes use of Pseudo Open Drain (POD) technology, which allows DDR4 DRAM to consume just half the electric current of DDR3 when reading and writing data.”

Source: Samsung Develops Power-Sipping DDR4 Memory

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